Heterojunction type compound semiconductor field effect...

Details Heterojunction type compound semiconductor field effect... Heterojunction type compound semiconductor field effect...

2005-08-30

2005-08-30

Wille, Douglas A. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S192000

Reexamination Certificate

active

06936870

ABSTRACT:
A heterojunction type compound semiconductor field effect transistor includes a channel layer, a first electron supply layer, an electric field strength reducing layer, a first contact layer, a recess stopper layer, and a second contact layer sequentially stacked on a compound semiconductor substrate. This transistor has a double recess structure. The first contact layer is composed of GaAs or InGaAs doped with n type impurities with a high electron mobility. The electric field strength reducing layer is composed of intrinsic InGaP.

REFERENCES:
patent: 5504353 (1996-04-01), Kuzuhara
patent: 6534790 (2003-03-01), Kato et al.
patent: 6624440 (2003-09-01), Bito et al.
patent: 7-335867 (1995-12-01), None

Affiliated with

Also associated with

Rating

Heterojunction type compound semiconductor field effect... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Heterojunction type compound semiconductor field effect..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Heterojunction type compound semiconductor field effect... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3523338