Heterojunction-type bipolar transistor with ballast resistance l

Details Heterojunction-type bipolar transistor with ballast resistance l Heterojunction-type bipolar transistor with ballast resistance l

1995-08-23

1998-02-24

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

257198, H01L 310328, H01L 310336

Patent

active

057214379

ABSTRACT:
A heterojunction type AlGaAs/GaAs bipolar transistor includes an n-GaAs collector layer, a p.sup.+ -GaAs base layer and an n-Al.sub.x Ga.sub.1-x As emitter layer formed in a stack, and an n-Al.sub.y Ga.sub.1-y As ballast resistance layer formed on the emitter layer. The ballast resistance layer has an Al concentration y in the range of 0<y<0.4, and a resistance higher than that of the emitter layer.

REFERENCES:
patent: 5162243 (1992-11-01), Streit et al.
G. Gao, et al., "Emitter Ballasting Resistor Design for, and Current Handling Capability of, AlGaAs/GaAs Power Heterojunction Bipolar Transistors," 8093 IEEE Transactions on Electron Devices, vol. 38, No. 2, pp. 185-196 (Feb. ' 91), New York.
Patent Abstracts of Japan, vol. 15, No. 185 (E-1066), May 13, 1991, abstracting Itakura et al./Matsushita published app'n JP 3-046 334, published Feb. 13, 1991.
Translation of Fig. 3 of Okada.

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