Heterojunction tunneling base transistor

Details Heterojunction tunneling base transistor Heterojunction tunneling base transistor

1977-06-09

1979-11-06

Larkins, William D.

357 16, 357 20, 357 33, 357 34, 357 56, H01L 29267, H01L 2988

Patent

active

041737636

ABSTRACT:
Device having three semiconductor regions, which can be characterized as the emitter, base and collector regions. The emitter and collector regions have a first conductivity type, and the base region has the opposite conductivity type, where both the base-emitter and base-collector junctions are heterojunctions. The base region is sufficiently thin that charge carriers can tunnel therethrough. The base region has a small resistance due to its heavy doping (which is greater than the doping of both the emitter and the collector). Both the valence band and the conduction band in the emitter and collector regions are shifted in the same direction with respect to the valence band and conduction band of the base region (i.e., the energy gaps of the emitter and collector are shifted in the same direction with respect to the energy gap of the base region and overlap with the energy band of the base to produce band-edge discontinuities .DELTA.E.sub.c and .DELTA.E.sub.v). Any materials yielding the proper energy band diagram can be used; for example, Si-GaP and alloys of GaAsSb-InGaAs are particularly suitable.

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Milnes et al., Heterojunctions and Metal-Semiconductor Junctions, Academic Press, N.Y., 1972, pp. 1-93.

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