Patent
1988-05-23
1990-02-20
Clawson, Jr., Joseph E.
357 16, H01L 2980
Patent
active
049030914
ABSTRACT:
A heterojunction transistor has a first semiconductor layer of a semi-insulating or a low impurity concentration, a second semiconductor layer formed on the first semiconductor layer and made of such a semiconductor material that, in cooperation with the first semiconductor layer, a first energy recess for electrons and a second energy recess for holes are respectively formed at the bottom of the conduction band and at the top of the valence band to constitute a conductive channel, a third semiconductor layer formed on the second semiconductor layer and forming a PN-junction with the upper surface of the second semiconductor layer to inject carriers into the conductive channel, a control electrode for applying an input signal to the third semiconductor layer, and a ground and an output electrode formed on the second semiconductor layer on the opposite sides of the third semiconductor layer.
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patent: 4471367 (1984-09-01), Chen et al.
patent: 4499481 (1985-02-01), Greene
patent: 4590502 (1986-05-01), Morkoc
patent: 4677457 (1987-06-01), Wolter
patent: 4734750 (1988-03-01), Okamura et al.
Baba Toshio
Ogawa Masaki
Ohata Keiichi
Clawson Jr. Joseph E.
NEC Corporation
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