Heterojunction superlattice with potential well depth greater th

Details Heterojunction superlattice with potential well depth greater th Heterojunction superlattice with potential well depth greater th

1978-06-09

1981-02-10

Larkins, William D.

357 4, 357 61, H01L 29205, H01L 4700

Patent

active

042505151

ABSTRACT:
A superlattice structure is disclosed in which alternating layers of semiductor alloy materials provide a one dimensional spatial periodic variation in band edge energy. A first layer of the superlattice device is an alloy including a first Group III material and a first Group V material, preferably In As, while the second layer is an alloy including a second Group III material different from the first Group III material and a second Group V material different from the first Group V material, and preferably GaSb. In the superlattice structure the valence band of the second alloy is closer to the conduction band of the first alloy than it is to the valence band of the first alloy.

REFERENCES:
patent: 3626257 (1971-12-01), Esaki et al.
patent: 4103312 (1978-07-01), Chang et al.
patent: 4137542 (1979-01-01), Chang et al.
Sai-Halasz et al., Applied Physics Letters, 30 pp. 651-653 (15 Jun. 1977).

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