Heterojunction solar cell with passivated emitter surface

Batteries: thermoelectric and photoelectric – Photoelectric – Cells

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257184, 257461, H01L 31072, H01L 310304

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active

053165934

ABSTRACT:
A high-efficiency heterojunction solar cell wherein a thin emitter layer (preferably Ga.sub.0.52 In.sub.0.48 P) forms a heterojunction with a GaAs absorber layer. A passivating window layer of defined composition is disposed over the emitter layer. The conversion efficiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the window layer.

REFERENCES:
patent: 4017332 (1977-04-01), James
patent: 4107723 (1978-08-01), Kamath
patent: 4179308 (1979-12-01), Olsen et al.
patent: 4591654 (1986-05-01), Yamaguchi et al.
S. R. Kurtz et al., Conference Record, 21st IEEE Photovolatic Specialists Conf. (May 1990), pp. 138-140.
Conference Record, 13th IEEE Photovolatic Specialists Conference, Jun., 1978, pp. 886-891.
IEEE Transactions on Electron Devices, vol. ED-27, No. 4, Apr., 1980, pp. 822-831.

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