Heterojunction semiconductor laser fabrication utilizing laser r

Details Heterojunction semiconductor laser fabrication utilizing laser r Heterojunction semiconductor laser fabrication utilizing laser r

1980-05-16

1982-03-09

Roy, Upendra

Metal treatment

Compositions

Heat treating

148187, 219121LF, 219121LH, 357 91, 427 531, 372 44, H01L 21203, H01L 29205, H01L 21263

Patent

active

043187528

ABSTRACT:
A stripe geometry is fabricated in a laser-diode structure having a plurality of epitaxial layers, including in tandem an undoped active semiconductor layer (3), a p-doped semiconductor layer (4), a moderately n-doped semiconductor layer (5) and a heavily p.sup.+ -doped layer (6) by focusing laser radiation on the n-doped semiconductor layer (5). The laser radiation is chosen to have a wavelength which passes through the p.sup.+ -doped layer (6) without absorption. When the laser radiation is absorbed in the n-doped layer, heat is generated which causes diffusion of p-dopant from the two adjacent layers to convert the exposed region to p-type. As the laser beam is scanned, a stripe having a forward pn junction for laser action is formed.

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