Heterojunction semiconductor device with <001> tilt

Details Heterojunction semiconductor device with <001> tilt Heterojunction semiconductor device with <001> tilt

1987-09-01

1989-10-03

Mintel, William

357 16, 357 17, 357 34, 357 22, H01L 2904

Patent

active

048720461

ABSTRACT:
A method is disclosed of epitaxially depositing a semiconductor material on a substrate of different material while accommodating lattice mismatch in a manner that results in improved epitaxially deposited material. In a disclosed embodiment GaAs is epitaxially deposited by molecular beam epitaxy on a silicon substrate having a {100} crystallographic surface tilted in the <001> direction. Improved semiconductor devices, made using the disclosed technique, are also set forth.

REFERENCES:
patent: 3476592 (1969-11-01), Berkenblit et al.
patent: 3920492 (1975-11-01), Sugita et al.
Fischer et al., "Characteristics of GaAs/AlGaAs MODFETS Grown Directly on (100) Silicon," Electronics Letters, 25 Oct. 84, vol. 20, No. 22, pp. 945-947.
Kemlage, "Deposition of a GaP Heteroepitaxy on Silicon," IBM Technical Disclosure Bulletin, vol. 18, No. 6, Nov. 1975, p. 1852.
Gourley et al., "Photoluminescence Microscopy of Epitaxial GaAs on Si," Appl. Phys. Lett. 51 (8), 24 Aug. 1987, pp. 599-601.
Windhorn et al., "A GaAs Double-Heterostructure Diode Lasers Fabricated on a Monolithic GaAs/Si Substrate," Appl. Phys. Lett. 45 (4), 15 Aug. 1984, pp. 309-310.
Mazur et al., "TEM Combined with AL.sub.x Ga.sub.1-x as Marker Layers as a Technique for the Study of GaAs MBE Growth," Mat. Res. Soc. Symp. Proc., vol. 37, 1985, pp. 1-15.
Mazur et al., "TEM Investigation of Polar-on-Nonpolar Epitaxy; GaAs--AlGaAs on (100)Ge," presented at the Materials Research Soc. Meeting, Boston, MA, Nov. 26-30, 1984, 1-4.
Metze et al., "Metal-Semiconductor Field Effect Transistors Fabricated in Gas as Layers Grown Directly on Si Substrates by Molecular Beam Epitaxy," Appl. Phys. Lett., 45(10) Nov. 1984, 1107-1109.
Kaplan, "Leed Study of the Stepped Surface of Vicinal Si(100)," Surface Science, 93(1980), pp. 145-158.
Hollan et al., "Difference Between the (001) Facet and the Vicinal Planes in Vapour Phase Epitaxal Growth of GaAs," Jour. of Crystal Growth, 22(1974), 175-180.
Uppal et al., "Molecular Beam Epitaxial Growth of GaAs on Si(211)," J. Appl. Phys., 58(6), 15 Sep. 1985, 2195-2203.
Fischer et al., "GaAs Bipolar Transistors Grown on (100) Si Substrates by Molecular Beam Epitaxy," Appl. Phys. Lett. 47(4), 15 Aug. 1985, 397-399.
Fischer et al., "GaAs/AlGaAs MODFET's Grown on (100) Ge," IEEE Electron Device Letters, vol. EOL-5, No. 11, Nov. 1984, pp. 456-457.
Fletcher et al., "GaAs Light-Emitting Diodes Fabricated on Ge-Coated Si Substrates," Appl. Phys. Lett. 44(10), 15 May 1984, pp. 967-968.
Miller et al., "Molecular Beam Epitaxial GaAs Heteroface Solar Cell Grown on Ge," Appl. Phys. Lett. 37(12), 15 Dec. 1980, pp. 1104-1106.
Wright et al., "Polar-on-Nonpolar Epitaxy: Sublattice Ordering in the Nucleation and Growth of GaP on Si(211) Surfaces," J. Vac. Sci. Technol. 21(2), July/Aug. 1982, 534-539.
"Growing GaAs on Silicon", IEEE Spectrum, Apr., 1986, p. 25.
Hollan, L. and C. Schiller, "Difference Between the (001) Facet and the Vicinal Planes in Vapour Phase Epitaxial Growth ofGaAs", Journal of Crystal Growth, 22 (1974), 175-180.
Matthews, J. W. and A. E. Blakeslee, "Defects in Epitaxial Multilayers", Journal of Crystal Growth, 29 (1975), 273-280.
Morizane, Kenji, "Antiphase Domain Structures in GaP and GaAs Epitaxial Layers Grown on Si and Ge", Journal of Crystal Growth, 38 (1977), 249-254.
Petroff, P. M., A. C. Gossard, A. Savage and W. Wiegmann, "Molecular Beam Epitaxy of Ge and Ga.sub.1-x Al.sub.x As Ultra Thin Film Superlattices", Journal of Crystal Growth, 46 (1979), 172-178.
Kaplan, Ray, "Leed Study of the Stepped Surface of Vicinal Si(100)", Surface Science, 93 (1980), 145-158.
Miller, D. L. and J. S. Harris, Jr., "Molecular Beam Epitaxial GaAs Heteroface Solar Cell Grown on Ge", Appl. Phys. Lett., 37 (12), 15 Dec. 1980, 1104-1106.
Aspnes, D. E. and A. A. Studna, "Chemical Etching and Cleaning Procedures for Si, Ge, and Some III-V Compound Semiconductors", Appl. Phys. Lett., 39 (4), Aug. 15, 1981, 316-318.
Wright, Steven L., Masanori Inada, and Herbert Kroemer, "Polar-On-Nonpolar Epitaxy: Sublattice Ordering in the Nucleation and Growth of GaP on Si(211) Surfaces", J. Vac. Sci. Technol., 21 (2), Jul./Aug. 1982, 534-539.
Wright, Steven L., Herbert Kroemer, and Masanori Inada, "Molecular Beam Epitaxial Growth of GaP on Si", J. Appl. Phys., 55 (8), Apr. 15, 1984, 2916-2927.
Christou, A., E. D. Richmond, B. R. Wilkins, and A. R. Knudson, "Surface Treatment of (1102) Sapphire and (100) Silicon for Molecular Beam Epitaxial Growth", Appl. Phys. Lett., 44 (8), Apr. 15, 1984, 796-798.
Fletcher, Robert M., D. Ken Wagner, and Joseph M. Ballantyne, "GaAs Ligh-Emitting Diodes Fabricated on Ge-Coated Si Substrates", Appl. Phys. Lett., 44 (10), 15 May, 1984, 967-969.
Wang, W. I., "Molecular Beam Epitaxial Growth and Material Properties of GaAs and AlGaAs on Si(100)", Appl. Phys. Lett., 44 (12), Jun. 15, 1984, 1149-1151.
Sheldon, P. and K. M. Jones; R. E. Hays, B-Y. Tsaur and John C. C. Fann, "Growth and Patterning of GaAs/Ge Single Crystal Layers on Si Substrates by Molecular Beam Epitaxy", Appl. Phys. Lett., 45 (3), Aug. 1, 1984, 274-276.
Fischer, R., T. Henderson, J. Klem, W. T. Masselink, W. Kopp, H. Morkoc, and C. W. Litton, "Characteristics of GaAs/AlGaAs MODFETs Grown Directly on (100) Silicon", Electronics Letters, 20 (22), Oct. 25, 1984, 945-947.
Fischer, R., J. Klem, T. Henderson, W. T. Masselink, W. Kopp, and H. Morkoc, "GaAs/AlGaAs MODFET's Grown on (100) Ge", IEEE Electron Device Letters, vol. EDL-5, No. 11, Nov. 1984, 456-457.
Metze, G. M., H. K. Choi, and B-Y. Tsaur, "Metal-Semiconductor Field-Effect Transistors Fabricated in GaAs Layers Grown Directly on Si Substrates by Molecular Beam Epitaxy", Appl. Phys. Lett., 45 (10), Nov. 15, 1984, 1107-1109.
Mazur, J. H., J. Washburn, T. Henderson, J. Klem, W. T. Masselink, R. Fischer, and H. Morkoc, "TEM Investigation of Polar-on-Nonpolar Epitaxy: GaAs-AlGaAs on (100) Ge", presented at the Materials Research Society Meeting, Boston, MA, Nov. 26-30, 1984.
Masselink, W. T., T. Henderson, J. Klem, R. Fischer, P. Pearah, and H. Morkoc; M. Hafich, P. D. Wang, and G. Y. Robinson, "Optical Properties of GaAs on (100) Si Using Molecular Beam Epitaxy", Appl. Phys. Lett., 45 (12), Dec. 15, 1984, 1309-1311.
Mazur; J. H., J. Washburn, T. Henderson, J. Klem, W. T. Masselink, R. Fischer, and H. Morkoc, "TEM Investigation of Polar-on-Nonpolar Epitaxy: GaAs--AlGaAs on (100) Ge", Mat. Res. Soc. Symp. Proc., vol. 37, 1985, Materials Researchy Society.
Mazur, J. H., J. Washburn, T. Henderson, J. Klem, W. T. Masselink, R. Fischer, and H. Morkoc, "Structure of the Si-GaAs Interface: Polar on Nonpolar Epitaxy", Proceedings of the 43rd Annular Meeting of the Electron Microscopy Society of America, 1985, 366-367.
Windhorne, T. H. et al., "AlGaAs Double-Heterostructure Diode Lasers Fabricated on a Monolithic GaAs/Si Substrate", Appl. Phys. Lett., 45(4), Aug. 15, 1984.
Mazur, J. H., J. Washburn, R. Fischer, T. Henderson, J. Klem, W. T. Masselink, W. Kopp, and H. Morkoc, "TEM Combined with Al.sub.x Ga.sub.1-x As Marker Layers as a Technique for the Study of GaAs MBE Growth", presented at the Arizona State University Centennial Symposium on High Resolution Electron Microscopy, Scottsdale, AZ, Jan. 7-11, 1985.
Masselink, W. T., R. Fischer, J. Klem, T. Henderson, and H. Morkoc, "GaAs/AlGaAs Multiquantum Wells Grown on Nonpolar Semiconductor Substrates", J. Vac. Sci. Technol., B 3(2), Mar./Apr. 1985, 548-551.
Morkoc, H., C. K. Peng, T. Henderson, W. Kopp, R. Fischer, L. P. Erickson, M. D. Longerbone, and
This invention was made with Government support under contract F49620-83-K-0021 awarded by the United States Air Force. The Government has certain rights in this invention.

Affiliated with

Also associated with

Rating

Heterojunction semiconductor device with &lt;001&gt; tilt does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Heterojunction semiconductor device with &lt;001&gt; tilt, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Heterojunction semiconductor device with &lt;001&gt; tilt will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-667550