Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1991-03-19
1993-03-30
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 17, 257 24, 257425, H01L 2980
Patent
active
051988798
ABSTRACT:
A heterojunction semiconductor device utilizing a quantum-mechanical effect comprises a first compound semiconductor (e.g., AlGaAs) layer and a second compound semiconductor (e.g., GaAs) layer having an electron affinity different from that of the first semiconductor layer, and the first and second compound semiconductor layers forming a heterojunction interface therebetween, the first layer having an energy at the conduction band bottom thereof higher than that of the second layer and doped with donor impurities, wherein at least one concave or convex portion of the first semiconductor layer is formed at the heterojunction interface and both sides of the concave or convex portion serve as a potential well or potential barriers against electrons accumulated in the second semiconductor layer close to the vicinity of the heterojunction interface.
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Crane Sara W.
Fujitsu Limited
James Andrew J.
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