Heterojunction semiconductor device

Details Heterojunction semiconductor device Heterojunction semiconductor device

1980-01-24

1983-05-03

Larkins, William D.

Metal treatment

Stock

Ferrous

148171, 357 17, 357 61, 372 44, H01S 3096, H01L 29203, H01L 29205, H01L 3300

Patent

active

043822657

ABSTRACT:
A heterojunction semiconductor device comprising an active zone made from a ternary or quaternary alloy of the Ga In As P type and resting via a buffer layer of similar composition on a substrate in such a way that the active layer and the buffer zone have similar expansion coefficients.

REFERENCES:
patent: 3814993 (1974-06-01), Kennedy
patent: 3911376 (1975-10-01), Thompson
patent: 3958263 (1976-05-01), Panish et al.
patent: 3963538 (1976-06-01), Broadie et al.
patent: 3982261 (1976-09-01), Antypas
patent: 3995303 (1976-11-01), Nahory et al.
patent: 4075651 (1978-02-01), James
patent: 4086608 (1978-04-01), Clawson et al.
patent: 4186407 (1980-01-01), Delagebeaudeuf et al.

Affiliated with

Also associated with

Rating

Heterojunction semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Heterojunction semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Heterojunction semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1210510