Heterojunction semiconductor device

Details Heterojunction semiconductor device Heterojunction semiconductor device

1978-03-27

1979-06-19

Edlow, Martin H.

357 30, 357 17, 357 18, H01L 29161

Patent

active

041588495

ABSTRACT:
A layer of germanium on a body of P type conductivity single crystal indium phosphide provides a blocking heterojunction. This device will emit light when a suitable voltage is placed thereacross or the device can be used as a photoconductor to generate electrons when light is directed thereon.

REFERENCES:
patent: 3369132 (1968-02-01), Fang
patent: 3603847 (1971-09-01), Shepherd
patent: 3982261 (1976-09-01), Antypas
patent: 4074305 (1978-02-01), Johnston
patent: 4081290 (1978-03-01), Bachmann

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