Heterojunction semiconductor

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357 15, 357 16, 357 55, 357 56, H01L 2980, H01L 2948, H01L 29161, H01L 2906

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044609108

ABSTRACT:
A heterojunction semiconductor is provided where the carrier transport dimension is governed by a layer thickness and where the characteristics of the materials self-limit process steps. A field effect transistor is provided wherein the work function is matched across regions to reduce limits on the channel dimension. A vertical transistor is provided wherein a vertical web is formed with precise thickness governed by electrolytic etching using photogenerated carrier current.

REFERENCES:
patent: 3614549 (1971-10-01), Lorenz
patent: 3801391 (1974-04-01), Dyment et al.
patent: 3814993 (1974-06-01), Kennedy
patent: 3833435 (1974-09-01), Logan et al.
patent: 3958143 (1976-05-01), Bell
patent: 3982261 (1976-09-01), Antypas
patent: 4075652 (1978-02-01), Umebachi et al.
patent: 4111725 (1978-09-01), Cho et al.
patent: 4128733 (1978-12-01), Fraas et al.
patent: 4135954 (1979-01-01), Chang et al.
patent: 4173763 (1979-11-01), Chang et al.
patent: 4198644 (1980-04-01), Esaki
patent: 4226649 (1980-10-01), Davey et al.
patent: 4236166 (1980-11-01), Cho et al.
patent: 4262296 (1981-04-01), Shealy et al.
patent: 4364072 (1982-12-01), Nishizawa
IEEE Journal of Solid State Circuits, vol. SC9, No. 5, Oct. 1974, pp. 256-268.
IEEE Transactions on Electron Devices, vol. ED-26, No. 6, Jun. 1979, pp. 980-986, (FIG. 2).
IEEE Transactions on Electron Devices, vol. ED-26, No. 3, Mar. 1979, pp. 172-182.
Solid-State Electronics, vol. 24, 1981, pp. 621-627.
Journal of Applied Physics, vol. 40, No. 1, Jan. 1969, pp. 438-439.
Solid-State Electronics, vol. 10, 1967, pp. 449-460.

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