Heterojunction semiconductor

Details Heterojunction semiconductor Heterojunction semiconductor

1983-12-01

1985-11-05

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 29580, 29590, H01L 2980, H01L 2948, H01L 29161, H01L 2906

Patent

active

045504890

ABSTRACT:
A heterojunction semiconductor is provided where the carrier transport dimension is governed by a layer thickness and where the characteristics of the materials self-limit process steps. A field effect transistor is provided wherein the work function is matched across regions to reduce limits on the channel dimension. A vertical transistor is provided wherein a vertical web is formed with precise thickness governed by electrolytic etching using photogenerated carrier current.

REFERENCES:
patent: 3833435 (1974-09-01), Logan et al.
patent: 4075652 (1978-02-01), Umebachi et al.
patent: 4111725 (1978-09-01), Cho et al.
patent: 4135954 (1979-01-01), Chang et al.
patent: 4226649 (1980-10-01), Davey et al.
patent: 4262296 (1981-04-01), Shealy et al.
patent: 4364072 (1982-12-01), Nishizawa
patent: 4460910 (1984-07-01), Chappell et al.
patent: 4505022 (1985-03-01), Briere

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