Heterojunction photovoltaic devices employing I-III-VI compounds

Details Heterojunction photovoltaic devices employing I-III-VI compounds Heterojunction photovoltaic devices employing I-III-VI compounds

1974-07-29

1976-08-31

Edlow, Martin H.

357 16, 357 61, H01L 2714

Patent

active

039785106

ABSTRACT:
Photovoltaic devices are constructed from a principal body of copper indium selenide (CuInSe.sub.2) upon which is deposited a hetero-epitaxial layer of a high bandgap semiconductor, such as an n-type layer of cadmium sulfide (CdS). When made with a high-resistance intermediate region, the device is a photovoltaic detector for modulated radiation and has a response time as low as 5 nsec for a reverse bias of approximately two to three volts. When made without a high-resistance intermediate region (e.g., an abrupt p-n heterojunction) the device is a useful solar cell. In these forms of the device, absolute photovoltaic quantum efficiencies up to 70 percent have been observed. The quantum efficiency of the solar cell type of device is reasonably flat between 0.55 and 1.25 .mu.m. With forward bias, the device is a light-emitting diode with external electro-luminescent quantum efficiency of .about.1.times.10.sup.-.sup.4 at room temperature and .about.1.times.10.sup.-.sup.2 at 77.degree.K, liquid nitrogen temperature.

REFERENCES:
patent: 3767471 (1973-10-01), Kasper et al.

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