Heterojunction phototransistor constructed in planar technology

Details Heterojunction phototransistor constructed in planar technology Heterojunction phototransistor constructed in planar technology

1981-11-09

1984-04-24

Edlow, Martin H.

357 30, 357 58, 357 68, H01L 2714

Patent

active

044451300

ABSTRACT:
A phototransistor in planar technology for optical fiber communications permitting an easy formation of the contact connection of the transistor base located within the intermediate layer of an npn stack as well as accurate localization of the pn junction. To this end, the upper semiconductor layer initially receives a first diffusion of doping impurity in a first region which penetrates into the lower layer to a slight extent and forms the base region. An impurity of opposite type is then implanted in a second region which is located within the first and forms the emitter region whilst the substrate constitutes the collector. The base and emitter connections are formed on the free face whilst the collector is connected on the substrate side.

REFERENCES:
patent: 3609460 (1971-09-01), Jones et al.
patent: 3990096 (1976-11-01), Namizaki et al.
patent: 3993963 (1976-11-01), Logan et al.
Electronics Letters, vol. 16, No. 1,3; Jan. 1980; Hitchin Herts (GB). K. Ankri et al: "Design and Evaluation of a Planar GaAlAs-GaAs Bipolar Transistor", pp. 41-42. *p. 41*.

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