Heterojunction photodiode of the avalanche type

Details Heterojunction photodiode of the avalanche type Heterojunction photodiode of the avalanche type

1978-11-07

1980-10-28

Edlow, Martin H.

357 30, 357 16, 357 17, H01L 2990, H01L 2914

Patent

active

042310490

ABSTRACT:
A photodiode comprising a first layer of a relatively large forbidden band (e.g. 1.4 eV) in a p type of conductivity, wherein photons can be absorbed, thus creating pairs of electron-holes diffusing towards a second layer, said second layer having a forbidden band. (0.7 eV) that is approximately half of the first band. In that second layer of an n-type of conductivity each electron falls and creates by impact ionization a new pair electron-hole, thus producing an avalanche gain of 2. The phenomenon occurs theoretically with a zero bias voltage. In practice the photodiode operates with a bias voltage near zero. The two materials of the heterojunction are for instance In P (forbidden band: 1.4 eV) and Ga.sub.0.47 In .sub.0.53 As (0.7 eV) providing crystalline networks perfectly matched.

REFERENCES:
patent: 3921192 (1975-11-01), Goronkin
patent: 3959646 (1976-05-01), DeCremorex
patent: 4016586 (1977-04-01), Anderson
patent: 4053918 (1977-10-01), Fletcher
patent: 4083062 (1978-04-01), Ohuchi

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