Heterojunction photodiode array

Details Heterojunction photodiode array Heterojunction photodiode array

1989-07-03

1990-10-02

Mintel, William

357 32, 357 90, 357 55, 357 56, 357 16, 357 47, H01L 2714

Patent

active

049610988

ABSTRACT:
An array of photovoltaic radiation detectors and a method of fabricating same. The array 10 includes a substrate 12 substantially transparent to radiation having wavelengths of interest and a radiation absorbing base layer 14 having a first surface 14a overlying a surface of the substrate for admitting incident radiation into the base layer. The base layer is comprised of a compositionally graded p-type Hg.sub.1-x Cd.sub.x Te material wherein x equals approximately 0.6 to approximately 0.8 at the first surface and equals less than approximately 0.4 at a second surface 14b. A cap layer 16 overlies the second surface of the radiation absorbing base layer, the cap layer also being compositionally graded. The cap layer has a bandgap that increases in width as a function of distance from the second surface of the base layer. The array further includes a plurality of regions 18 formed through the top surface of and substantially wholly within the wide bandgap cap layer, each of the regions forming a p-n junction 18a with the underlying material of the cap layer for collecting charge carriers. A plurality of channels 22 prevent lateral diffusion of charge carriers through the base layer.

REFERENCES:
patent: 3677280 (1972-07-01), Weckler
patent: 3845494 (1974-10-01), Ameurlaine et al.
patent: 3858306 (1975-01-01), Kloek et al.
patent: 3988774 (1976-10-01), Cohen-Solal et al.
patent: 4105478 (1978-08-01), Johnson
patent: 4132999 (1979-01-01), Maille et al.
patent: 4206003 (1980-06-01), Koehler
patent: 4411732 (1983-10-01), Wotherspoon
patent: 4532699 (1985-08-01), Bourdillot et al.
patent: 4639756 (1987-01-01), Rosbeck et al.
patent: 4646120 (1987-02-01), Hacskaylo
patent: 4766084 (1988-08-01), Bory et al.
Lanir et al., "Backside-Illuminated HgCdTe/CdTe Photodiodes," Appl. Phys. Lett. 34(1), Jan. 1, 1979, pp. 50-52.
Almasi et al., "CdTe--HgTe Heterostructures", Journal of Applied Physics, vol. 39, No. 1, Jan. 1968, pp. 233-245.
Stelzer et al., "Mercury Cadmium Telluride as an Infrared Detector Material," IEEE Transactions on Electron Devices, vol. ED-16, No. 10, Oct. 1969, pp. 880-884.

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