Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Reexamination Certificate
2008-05-06
2008-05-06
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
C257S186000, C257S188000, C257S189000, C257S199000, C257S481000, C257S485000, C257SE31054, C257SE31065, C257SE31067
Reexamination Certificate
active
07368762
ABSTRACT:
The present invention provides a heterojunction photodiode which includes a pn or Schottky-barrier junction formed in a first material region having a bandgap energy Eg1. When reverse-biased, the junction creates a depletion region which expands towards a second material region having a bandgap energy Eg2which is less than Eg1. This facilitates signal photocurrent generated in the second region to flow efficiently through the junction in the first region while minimizing the process-related dark currents and associated noise due to near junction defects and imperfect surfaces which typically reduce photodiode device performance. The heterojunction photodiode can be included in an imaging system which includes an array of junctions to form an imager.
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Lee Donald L.
Piquette Eric C.
Tennant William E.
Thomas Mason L.
Zandian Majid
Koppel, Patrick, Heybl & Dawson
Liu Benjamin Tzu-Hung
Teledyne Licensing LLC
Tran Minhloan
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