Heterojunction photodiode

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure

Reexamination Certificate

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Details

C257S186000, C257S188000, C257S189000, C257S199000, C257S481000, C257S485000, C257SE31054, C257SE31065, C257SE31067

Reexamination Certificate

active

07368762

ABSTRACT:
The present invention provides a heterojunction photodiode which includes a pn or Schottky-barrier junction formed in a first material region having a bandgap energy Eg1. When reverse-biased, the junction creates a depletion region which expands towards a second material region having a bandgap energy Eg2which is less than Eg1. This facilitates signal photocurrent generated in the second region to flow efficiently through the junction in the first region while minimizing the process-related dark currents and associated noise due to near junction defects and imperfect surfaces which typically reduce photodiode device performance. The heterojunction photodiode can be included in an imaging system which includes an array of junctions to form an imager.

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