Heterojunction p-i-n photovoltaic cell

Details Heterojunction p-i-n photovoltaic cell Heterojunction p-i-n photovoltaic cell

1986-10-21

1987-12-01

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

136255, 136260, 136264, 136265, 357 16, 357 30, 357 59, H01L 3106

Patent

active

047105895

ABSTRACT:
A heterojunction p-i-n photovoltaic cell having at least three different semiconductor layers formed of at least four different elements comprises a p-type relatively wide band gap semiconductor layer, a high resistivity intrinsic semiconductor layer, used as an absorber of light radiation, and an n-type relatively wide band gap semiconductor layer. The intrinsic layer is in electrically conductive contact on one side with the p-type layer and on an opposite side with the n-type layer. First and second ohmic contacts are in electrically conductive contact with the p-type layer and the n-type layer, respectively.

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