Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – Plural non-isolated transistor structures in same structure
Patent
1992-09-28
1995-01-03
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
Plural non-isolated transistor structures in same structure
257 76, 257 77, 257566, 257575, H01L 4900, H01L 2972
Patent
active
053789210
ABSTRACT:
There is provided a high-speed heterojunction transistor which is excellent in heat and radiation resistances with its emitter injection efficiency improved due to heterojunction. A .beta. silicon carbide layer (44) acting as base region is grown on an .alpha. silicon carbide substrate (42) acting as emitter region. Due to the difference in forbidden band between the .alpha. silicon carbide substrate (42) and the .beta. silicon carbide layer (44), heterojunction can be obtained. Because the .alpha. silicon carbide substrate (42) has a wider forbidden band, emitter efficiency is improved, allowing a high-speed transistor to be realized. Further, the device is made of silicon carbide, it is excellent in heat and radiation resistances. This invention may be used in an embodiment in which a heterojunction bipolar transistor or a heterojunction IIL is manufactured.
REFERENCES:
patent: 4531142 (1985-07-01), Weyrich et al.
patent: 5006180 (1991-04-01), Kanai et al.
Crane Sara W.
Rohm & Co., Ltd.
Wallace Valencia M.
LandOfFree
Heterojunction multicollector transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Heterojunction multicollector transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Heterojunction multicollector transistor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2213022