Heterojunction method and structure

Details Heterojunction method and structure Heterojunction method and structure

1991-03-22

1992-05-26

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 29, 437 41, 437 59, 148DIG72, 148DIG53, H01L 21265

Patent

active

051167743

ABSTRACT:
A method of fabricating heterojunction structures includes providing a semiconductor substrate and forming a plurality of semiconductor layers thereon. Ohmic and gate contacts are then formed on the plurality of semiconductor layers and portions of at least one of the semiconductor layers disposed between the ohmic and gate contacts are removed. Gate metal is then formed on the gate contacts. Source and drain regions are formed in the semiconductor layers and the formation is self-aligned to the gate metal. Following the formation of the source and drain regions, ohmic metal is formed on the ohmic contacts.

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