Electrical resistors – Resistance value responsive to a condition – Magnetic field or compass
Patent
1988-12-29
1990-03-27
Walberg, Teresa J.
Electrical resistors
Resistance value responsive to a condition
Magnetic field or compass
324252, H01L 4300
Patent
active
049124510
ABSTRACT:
The heterojunction magnetic field sensor is basically a heterojunction structure forming a two-dimensional electron gas layer having a high carrier mobility at the junction portion of at least two different kinds of semiconductor layers having a different band gap, respectively, and further, at least one semiconductor layer having a quantum well structure is provided adjacent to and in contact with the two dimensional electron gas layer, the energy level of the ground state subband thereof being higher than that of the two-dimensional electron gas layer. This heterojunction magnetic field sensor has a high sensitivity which is not saturated even under a high electric field and provides an enhanced output even under the high electric field.
REFERENCES:
patent: 4827218 (1989-05-01), Meunier et al.
English Abstract of Japanese Unexamined Patent Publication 63-54785, Mar. 1988.
"AlGaAs/GaAs Hetero-Junction Hall Device", Taguchi et al., Journal of the Electronics and Communication Institute, vol. 170-C, No. 5, pp. 758-763, 5/1987.
Electronics and Communications in Japan, Part II: Electronics, vol. 71, No. 3, Mar. 1988, AlGaAs/GaAs Heterojunction Hall Device, Taguchi et al., pp. 110-116.
Molecular Beam Epitaxy 1988, "Highly-Sensitive Hall Element with Quantum-Well Superlattice Structures", Sugiyama et al., pp. 552-555, Workbook of the Fifth International Conference on Molecular Beam Epitaxy, (Aug. 28-Sep. 1, 1988).
"Al.Ga.As/Ga.As Hetero-Junction Hall Device", (Nov., 1985), A Memo of the General Session of the Semiconductor and its Material Dept. in Electro Communication Institute held in 1985.
"Enhanced Hall Output in AlAs/GaAs Superlattice Hall Device with Quantum-Well Spacer", The Technical Research Report of Electro-Information Communication Institute, (Feb. 15, 1988).
Soga Hajime
Sugiyama Yoshinobu
Tacano Munecazu
Director--General of Agency of Industrial Science and Technology
Lateef M.
Nippon Soken Inc.
Walberg Teresa J.
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