Heterojunction light-emitting diode array

Details Heterojunction light-emitting diode array Heterojunction light-emitting diode array

1991-03-28

1992-04-14

Hille, Rolf

Coherent light generators

Particular component circuitry

Optical pumping

357 4, 357 16, 372 45, 372 46, H01L 3300

Patent

active

051052369

ABSTRACT:
A light-emitting diode array is fabricated by forming a light-emitting diode heterojunction at the interface between a superlattice layer comprised of alternations of a multiplicity of semiconductor layers that have different energy gaps, and a doped diffusion mixed region having a larger energy gap than that of the superlattice layer which is formed by impurity doping of part of the said superlattice layer. The light-emitting diode array thus formed exhibits low optical crosstalk and good diode uniformity.

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Blakeslee et al., "Reducing Resistance in PN Junctions using GaAsP", IBM Technical Disclosure Bulletin, vol. 15, No. 4, Sep. 1972.

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