Heterojunction interband tunnel diodes with improved P/V current

Details Heterojunction interband tunnel diodes with improved P/V current Heterojunction interband tunnel diodes with improved P/V current

1995-11-13

1997-08-19

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 22, 257 23, 257 18, H01L 2906

Patent

active

056591802

ABSTRACT:
A heterojunction tunnel diode with first and second barrier layers, the first barrier layer including aluminum antimonide arsenide. A quantum well formation is sandwiched between the first and second barrier layers, and includes first and second quantum well layers with a barrier layer sandwiched therebetween, the first quantum well layer being adjacent the first barrier layer. The first quantum well layer is gallium antimonide arsenide which produces a peak in hole accumulations therein. The second quantum well layer produces a peak in electron accumulations therein. A monolayer of gallium antimonide is sandwiched in the first quantum well layer at the peak in hole accumulations and a monolayer of indium arsenide is sandwiched in the second quantum well layer at the peak in electron accumulations.

REFERENCES:
patent: 5061970 (1991-10-01), Goronkin
patent: 5296721 (1994-03-01), Schulman et al.
patent: 5489785 (1996-02-01), Tehrani et al.

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