Heterojunction impatt diode

Details Heterojunction impatt diode Heterojunction impatt diode

1990-07-03

1992-12-01

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Avalanche diode

H01L 29205, H01L 2990

Patent

active

051683288

ABSTRACT:
A GaAs/AlGaAs heterojunction IMPATT diode is described. The AlGaAs n-type avalanche layer is graded so that a 0.30 eV bandgap discontinuity of the pn heterojunction is provided without any bandgap discontinuity at the avalanche/drift layer interface. Minority carriers in the p-type GaAs layer are concentrated at the junction due to the discontinuity which occurs primarily in the conduction band thereby concentrating the zero bias electric field and thus minimizing the voltage drop across the avalanche layer. Furthermore, the zero bias depletion width is increased due to the increased field, which lowers the device capacitance.

REFERENCES:
patent: 3466512 (1969-09-01), Seidel
patent: 4176366 (1979-11-01), Delagebeaudeuf
patent: 4291320 (1981-09-01), Wen et al.
patent: 4857972 (1989-08-01), Jorke et al.
High Efficiency GalnAs/InP Heterojunction IMPATT Diodes; DeJaeger et al. IEEE Transactions on Electron Decives, vol. ED-30, No. 7, Jul. 1983.
Transit-Time-Induced Microwave Negative Resistance in Gal-xAlxAs-GaAs Heterostructure Diodes; Electonics Letters Sep. 18, 1975; vol. 11 No. 19, pp. 457-458.

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