1980-01-10
1981-09-22
Edlow, Martin H.
357 16, H01L 2990, H01L 29161
Patent
active
042913209
ABSTRACT:
A double drift IMPATT diode is formed from two semiconductors having different band gaps and carrier mobilities. The avalanche portion of the diode is created in the semiconductor having the lower band gap. The electron drift portion is created in the semiconductor having the higher electron mobility and the hole drift portion is created in the semiconductor having the higher hole mobility. This decreases the voltage required across the avalanche portion, decreases the series resistance, and thus increases the efficiency of the diode.
REFERENCES:
patent: 4186407 (1980-01-01), Dolagebeaudeuf
Immorlica, Jr. Anthony A.
Kuvas Reidar L.
Wen Cheng P.
Edlow Martin H.
Hamann H. Frederick
Malin Craig O.
Rockwell International Corporation
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