Heterojunction HgCdTe photovoltaic detector and its production p

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

357 16, 357 24, 357 55, 357 61, H01L 2714, H01L 3100, H01L 29161, H01L 29205

Patent

active

047914670

ABSTRACT:
Heterojunction HgCdTe detector has in order, a first type P Hg.sub.1-x.sbsb.1 Cd.sub.x.sbsb.i Te monocrystalline semiconductor layer, x.sub.1 being a number between 0 and 1, containing a first type P region, a second type P Hg.sub.1-x.sbsb.2 Cd.sub.x.sbsb.2 Te monocrystalline semiconductor layer, x.sub.2 being a number higher than x.sub.1 between 0 and 1, containing a second type N region which faces and is in contact with the first region, an electrical insulant located above the first semiconductor layer and an electric contact element located on the insulant for collecting the electric signal produced in said first region, said contact element having a part traversing the second region and partly penetrating the first region with application to infrared radiation detection.

REFERENCES:
patent: 3988774 (1976-10-01), Cohen-Solal et al.
patent: 4206003 (1980-06-01), Koehler
patent: 4507674 (1985-03-01), Gaalema
Journal of Applied Physics, vol. 57, No. 8, Apr. 1985, "Hg.sub.1-x Cd.sub.x Te-Hg.sub.1-y Cd.sub.y Te(O.ltoreq.x,y.ltoreq.1) Heterostructures: Properties Epitaxy, and Applications", Herman et al.
Conference Europeene Sur Les Communications Optiques, 21-24, Sep. 1982.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Heterojunction HgCdTe photovoltaic detector and its production p does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Heterojunction HgCdTe photovoltaic detector and its production p, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Heterojunction HgCdTe photovoltaic detector and its production p will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2199485

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.