Patent
1986-12-18
1988-12-13
Carroll, J.
357 16, 357 24, 357 55, 357 61, H01L 2714, H01L 3100, H01L 29161, H01L 29205
Patent
active
047914670
ABSTRACT:
Heterojunction HgCdTe detector has in order, a first type P Hg.sub.1-x.sbsb.1 Cd.sub.x.sbsb.i Te monocrystalline semiconductor layer, x.sub.1 being a number between 0 and 1, containing a first type P region, a second type P Hg.sub.1-x.sbsb.2 Cd.sub.x.sbsb.2 Te monocrystalline semiconductor layer, x.sub.2 being a number higher than x.sub.1 between 0 and 1, containing a second type N region which faces and is in contact with the first region, an electrical insulant located above the first semiconductor layer and an electric contact element located on the insulant for collecting the electric signal produced in said first region, said contact element having a part traversing the second region and partly penetrating the first region with application to infrared radiation detection.
REFERENCES:
patent: 3988774 (1976-10-01), Cohen-Solal et al.
patent: 4206003 (1980-06-01), Koehler
patent: 4507674 (1985-03-01), Gaalema
Journal of Applied Physics, vol. 57, No. 8, Apr. 1985, "Hg.sub.1-x Cd.sub.x Te-Hg.sub.1-y Cd.sub.y Te(O.ltoreq.x,y.ltoreq.1) Heterostructures: Properties Epitaxy, and Applications", Herman et al.
Conference Europeene Sur Les Communications Optiques, 21-24, Sep. 1982.
Amingual Daniel
Felix Pierre
Carroll J.
Commissariat a l''Energie Atomique
Ngo Ngan Van
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