Heterojunction-gate field-effect transistor enabling easy contro

Details Heterojunction-gate field-effect transistor enabling easy contro Heterojunction-gate field-effect transistor enabling easy contro

1986-01-31

1988-04-12

Edlow, Martin H.

357 4, 357 22, H01L 2712, H01L 29161, H01L 2980

Patent

active

047378271

ABSTRACT:
A heterojunction-gate field-effect transistor comprises an active layer of semiconductor material having source and drain regions, an intermediate layer of another semiconductor material formed on the active layer between the source and drain regions, the intermediate layer inducing a two-dimensional charge layer in a surface portion of the active layer between the source and drain regions, and a gate electrode of a mixed semiconductor crystal formed on the intermediate layer to control the conductivity of the two-dimensional charge layer by an electrical potential applied thereto. The mixed semiconductor crystal may be GaP-InAs or mixed crystal of GaP-InAs mixed crystal and AlP-GaAs, AlsB-GaP, or GaSb-GaP mixed crystal.

REFERENCES:
Applied Physics Letters, vol. 28, No. 9, 5/1/76, "Efficient . . . Ga.sub.x In.sub.1-x As.sub.y P.sub.1-y ", Pearsall et al., pp. 499-500.

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