Heterojunction gate ballistic JFET with channel thinner than Deb

Details Heterojunction gate ballistic JFET with channel thinner than Deb Heterojunction gate ballistic JFET with channel thinner than Deb

1985-07-25

1987-12-08

Larkins, William D.

Fishing, trapping, and vermin destroying

357 16, 357 4, 437133, H01L 2980

Patent

active

047121220

ABSTRACT:
A junction field effect transistor has a wide bandgap heterojunction gate. The source to gate spacing is less than the carrier mean free path for ballistic transport. The channel thickness is less than twice the Debye length.

REFERENCES:
patent: 3962716 (1976-06-01), Petroff et al.
patent: 4075652 (1978-02-01), Umebachi et al.
patent: 4200879 (1980-04-01), Nonaka et al.
patent: 4366493 (1982-12-01), Breslau et al.
patent: 4460910 (1984-07-01), Chappell et al.
patent: 4532533 (1985-07-01), Jackson
patent: 4563696 (1986-01-01), Jay

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