Heterojunction field effect transistors using...

Details Heterojunction field effect transistors using... Heterojunction field effect transistors using...

2005-08-30

2005-08-30

Tran, Minhloan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S019000, C257S020000, C257S022000, C257S024000, C257S077000, C257S197000

Reexamination Certificate

active

06936869

ABSTRACT:
Semiconductor devices, e.g., heterojunction field effect transistors, fabricated with silicon-germnanium buffer layer and silicon-carbon channel layer structures. The invention provides a method of reducing threading defect density via reducing germanium content in a SiGe relaxed buffer layer on which a strained silicon channel layer is formed, by forming the strained silicon channel layer of a silicon-carbon alloy, e.g., containing less than about 1.5 atomic % C substitutionally incorporated in the Si lattice of the alloy.

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S. Takagi, J.L. Hoyt, K. Rim, J. Welser, and J.F. Gibbons, “Evaluation of the Valence Band Discontinuity of Si/Si1-xGex/Si Heterostructures by Application of Admittance Spectroscopy to MOS Capacitors,” IEEE Trans. Elec. Dev., 45 (2), pp. 493-501 (1998).
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