Patent
1990-09-06
1992-01-14
Prenty, Mark
357 4, 357 22, H01L 29161, H01L 2712, H01L 2980
Patent
active
050815113
ABSTRACT:
A heterojunction field effect transistor (HFET) having a source, drain, and channel, wherein the channel comprises a quantum well and at least one mono-atomic well or barrier layer is provided. The mono-atomic well or barrier layer has a different bandgap than the channel region and serves to modify electron wave function and conduction band energy in the channel region. Preferably, an indium arsenide well monolayer is formed in an InGaAs channel region and functions to move a first quantized energy level E.sub.0 closer to the bottom of the channel region quantum well thereby increasing electron concentration by increasing effective band offset potential. Another embodiment uses an aluminum arsenide monolayer as a barrier monolayer in the InGaAs channel. By varying location of the monolayers, confinement of electrons in the channel can be improved.
REFERENCES:
patent: 4807001 (1989-02-01), Hida
patent: 4882609 (1989-11-01), Schubert et al.
patent: 4942438 (1990-07-01), Miyamoto
Extended Abstracts of the 1990 International Conference on Solid State Devices and Materials; Aug. 22, 1990, Part I; pp. 35-38; by Matsumura et al.
Goronkin Herbert
Tehrani Saied N.
Langley Stuart T.
Motorola Inc.
Prenty Mark
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