Heterojunction field effect transistor (HJFET) having an improve

Details Heterojunction field effect transistor (HJFET) having an improve Heterojunction field effect transistor (HJFET) having an improve

1993-12-21

1995-02-14

Loke, Steven Ho Yin

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257183, 257192, H01L 31072, H01L 31109, H01L 310328

Patent

active

053898028

ABSTRACT:
In an n-channel heterojunction field effect transistor (HJFET) comprising a buffer region, a channel layer, and a carrier supplying layer which are deposited on a substrate in this order, the buffer region comprises a p-type GaAs layer, an undoped GaAs layer, and an n-type GaAs layer in this order. The p-type GaAs layer has substantially the same impurity concentration per unit area as the n-type GaAs layer. Holes are depleted in the whole of the buffer region at thermal equilibrium.

REFERENCES:
P. Cantfield, et al, "Buried-Channel GaAs MESFET's with Frequency-Independent Output Conductance", IEEE Electron Device Letters, vol. EDL-8, No. 3, Mar. 19, 1987, pp. 88-89.

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