Heterojunction field effect transistor having gate threshold vol

Details Heterojunction field effect transistor having gate threshold vol Heterojunction field effect transistor having gate threshold vol

1989-01-04

1989-09-12

Mintel, William

357 16, 357 58, 357 56, 357 231, 357 2315, H01L 2980

Patent

active

048664910

ABSTRACT:
A field effect transistor comprising a semiconductor channel region; an undoped semiconductor material region adjacent the channel region; a second semiconductor material region separated from the channel region; and a region of semiconductor material adjacent the second region and having a narrower band gap than the band gap of the region adjacent the channel region; and ohmic contact means to the region having the narrower band gap.

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