Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Patent
1999-12-23
2000-11-07
Crane, Sara
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
257194, 257284, H01L 31072
Patent
active
061440485
ABSTRACT:
A Schottky barrier layer in separate regions between a source electrode and a gate electrode and between a drain electrode and the gate electrode is completely covered with an etching stopper layer. The gate electrode is separated from a cap layer.
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Enoki Takatomo
Suemitsu Tetsuya
Crane Sara
Nippon Telegraph and Telephone Corporation
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