Heterojunction field-effect transistor

Details Heterojunction field-effect transistor Heterojunction field-effect transistor

1991-10-24

1992-09-29

Wojciechowicz, Edward J.

357 16, 357 15, H01L 2980

Patent

active

051517574

ABSTRACT:
A heterojunction field-effect transistor includes a first electron transit channel formation semiconductor layer formed on a substrate and consisting of a compound semiconductor, a first electron supply semiconductor layer formed on the first electron transit channel formation semiconductor layer and consisting of a compound semiconductor, a gate electrode, a source electrode, and a drain electrode formed on the first electron supply semiconductor layer, and a second electron transit channel formation semiconductor layer formed between the substrate and the first electron transit channel formation semiconductor layer. The second electron transit channel formation semiconductor layer consists of a cmpound semiconductor which has electron affinity smaller than that of the first electron transit channel formation semiconductor layer and larger than that of the first electron supply semiconductor layer, and is different from the first electron transit channel formation semiconductor layer in field strength position where a maximum value of an electron velocity is obtained, and is arranged such that an energy level on a bottom of an electron conduction band of the second electron transit channel formation seimconductor layer is substantially the same as a Fermi level.

REFERENCES:
patent: 5105241 (1992-04-01), Ando
Mishra et al., "The AlInAs-GaInAs HEMT for Microwave and Millimeter-Wave Applications", IEEE Transactions on Microwave Theory and Techniques, vol. 37, No. 9, Sep. 1989, pp. 1279-1285.

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