Heterojunction field effect transistor

Details Heterojunction field effect transistor Heterojunction field effect transistor

1996-02-21

1999-01-05

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257201, 257615, 257 22, H01L 310328

Patent

active

058566856

ABSTRACT:
A heterojunction field effect transistor having an InP substrate, comprising a buffer layer formed between an active layer where a carrier travels and said InP substrate, wherein said buffer layer has at least two cycles of superlattices, each of said superlattices being formed of at least one semiconductor selected from the group consisting of Al.sub.x In.sub.1-x P (0.1.ltoreq.x.ltoreq.1), Ga.sub.x In.sub.1-x P (0.ltoreq.x.ltoreq.1), Al.sub.x Ga.sub.1-x As (0.ltoreq.x.ltoreq.1), and Al.sub.x In.sub.1-x As (0.5.ltoreq.x.ltoreq.1), and at least one semiconductor selected from the group consisting of InP and In.sub.0.52 Al.sub.0.48 As.

REFERENCES:
patent: 5404032 (1995-04-01), Sawada et al.
patent: 5449928 (1995-09-01), Matsugatani et al.

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