Heterojunction field effect transistor

Details Heterojunction field effect transistor Heterojunction field effect transistor

2006-03-14

2006-03-14

Zarabian, Amir (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S194000, C257S183000

Reexamination Certificate

active

07012286

ABSTRACT:
A heterojunction field effect transistor operative from the micro wave band to the millimeter wave band has a gate recess structure formed in a manner such that its eye-empty areas have a significant effect on the voltage durability of the transistor. The eye-empty areas extend from a gate electrode to a source electrode as well as to a drain electrode and are formed by at least two material layers having different impurity concentrations, thereby making it possible to obtain an improved heterojunction field effect transistor having a reduced series resistance and an increased voltage durability.

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English Language Abstract of JP6-104289, Tanimoto Takuma et al, Semiconductor Device and Amplifier Circuit Wherein the Semiconductor Device is Used, Apr. 5, 1994.

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