Heterojunction field effect transistor

Details Heterojunction field effect transistor Heterojunction field effect transistor

1989-01-19

1990-10-30

Jackson, Jr., Jerome

357 16, H01L 29205, H01L 2980

Patent

active

049672428

ABSTRACT:
A heterojunction field effect transistor includes a carrier supplying layer comprising material which is not likely to produce a deep level even by doping. A channel layer comprises material which has the largest electron affinity among three types of semiconductor material constituting the heterojunction FET and has a high carrier mobility. A spacer layer is interposed between the channel layer and the carrier supplying layer and comprises material which enables the reduction of Coulomb interaction between two-dimensional carriers in the channel layer and ions in the carrier supplying layer. In addition, the spacer layer increases the effective conduction band energy discontinuity .DELTA.E.sub.c between the carrier supplying layer and the channel layer.

REFERENCES:
patent: 4792832 (1988-12-01), Baba
patent: 4806998 (1989-02-01), Vinter
patent: 4827320 (1989-05-01), Morkoc et al.
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-GaAs Superlattice and Its Application to High-Quality Two-Dimensional Electron Gas Systems", Baba et al., J. Appl. Phys. 59(2), 01/15/86, pp. 526-532.
"Electron Mobilities in Modulation Doped Ga.sub.0.47 In.sub.0.53 As/Al.sub.0.48 In.sub.0.52 As Heterojunctions Grown by Molecular Beam Epitaxy", Cheng et al., Appl. Phys. Lett. 40(2), Jan. 15, 1982, pp. 147-149.

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