Heterojunction field effect device having an implanted region wi

Details Heterojunction field effect device having an implanted region wi Heterojunction field effect device having an implanted region wi

1987-11-20

1988-09-13

James, Andrew J.

357 16, 357 58, 357 4, H01L 2980

Patent

active

047713240

ABSTRACT:
A depletion type element under the category of heterojunction field effect element having an n-region arranged in contact with a two-dimensional electron gas. More specifically a very limited region of the upper surface of the heterojunction faces the bottom surface of a gate electrode, thereby realizing various advantages, e.g.; (1) electron mobility is increased; (2) the resistivity is decreased in the source and drain regions as well as in the regions connecting the source and drain regions and the region facing the gate electrode; (3) the power consumption is decreased; (4) the reproductivity is improved, and (5) the overall reliability is improved.

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