Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Patent
1994-01-26
1995-03-21
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
257194, 257472, H01L 29784, H01L 29804, H01L 29812
Patent
active
053998863
ABSTRACT:
A field effect semiconductor device which restricts current flow through a drain-gate path, but allows current to easily flow through a gate-source path. A high potential barrier layer is formed on the drain side of an active layer. The potential barrier layer has a wider energy band gap than the active layer. A source electrode and a drain electrode make ohmic contact with the active layer and a gate electrode exists between the source electrode and the drain electrode. The gate electrode is partially formed on the potential barrier layer and makes Schottky contact with the active layer on the source side of the semiconductor device and makes Schottky contact with the potential barrier layer on the drain side of the semiconductor device.
REFERENCES:
Li et al; "Molecular Beam Epitaxial GaAs/Al.sub.0.2 Ga.sub.0.8 As p-Channel FET on (311)A Facets of Patterned (100) GaAs Obtained by Silicon Doping"; vol. 12, No. 7, IEEE Electron Devices Letters.
Ho et al; "Extremely high gain, low noise InAlAs/InGaAs HEMTS Grown by MBE"; IEDM; 1988 pp. 184-186.
Fahmy Wael M.
Fujitsu Limited
Hille Rolf
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