Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2007-08-07
2007-08-07
Tran, Minh-Loan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S184000, C257S439000, C257SE31021
Reexamination Certificate
active
10492372
ABSTRACT:
A photodetector and method of detecting far infrared optical signals. In one embodiment of the present invention, the photodetctor has a plurality of N barriers, N being an integer greater than 1, each barrier being a layer of a material made from a first and a second group III elements and a first group V element and characterized by a bandgap. The photodetector further has a plurality of N−1 emitters, each emitter being a layer of material made from a third group III element and a second group V element and characterized by a bandgap different from that of the barriers and having at least one free carrier responsive to optical signals, wherein each emitter is located between two barriers so as to form a heterojunction at each interface between an emitter and a barrier. Moreover, each emitter is doped with a first group II, IV or VI element to cause free carriers in the emitter, wherein at least one construction parameter of each emitter causes at least one free carrier to occupy a range of substantially continuously distributed energies characterized by a three dimensional Fermi level and respond to optical signals having wavelength in the range of 3 to 100 μm with significant absorption.
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Matsik Steven George
Perera A.G. Unil
Georgia State University Research Foundation, Inc.
Needle & Rosenberg P.C.
Tran Minh-Loan
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