Heterojunction diode with reduced leakage current

Details Heterojunction diode with reduced leakage current Heterojunction diode with reduced leakage current

2006-11-21

2006-11-21

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

C257S197000, C257S076000, C257S065000, C257S055000

Reexamination Certificate

active

07138668

ABSTRACT:
An aspect of the present invention provides a semiconductor device that includes a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type, having a different band gap from the first semiconductor region and forming a heterojunction with the first semiconductor region.

REFERENCES:
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patent: 6246077 (2001-06-01), Kobayashi et al.
patent: 2002/0197809 (2002-12-01), Asai et al.
patent: 2003/0052321 (2003-03-01), Sridevan
patent: 2004/0031971 (2004-02-01), Shimoida et al.
patent: 2004/0079989 (2004-04-01), Kaneko et al.
patent: 0 794 578 (1997-09-01), None
patent: 2003-318413 (2003-11-01), None
“Power Device/Power IC Handbook” Japanese Electrotechnical Committee, pp. 12-21.
Shenoy, P.M., et al. “High Voltage P+polysilicon/N−6H-SiC heterojunction diodes.” Electronics Letters, IEE Stevenage, GB, vol. 33, No. 12, Jun. 5, 1997, pp. 1086-1087.

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