Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Between different group iv-vi or ii-vi or iii-v compounds...
Patent
1995-02-13
1996-07-02
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Between different group iv-vi or ii-vi or iii-v compounds...
257197, 257200, 257472, 257916, H01L 310328
Patent
active
055324860
ABSTRACT:
A high speed diode with a low forward-bias turn-on voltage is formed by a heterojunction between a layer of doped semiconductor material that has a narrow bandgap energy of not more than about 0.4 eV, and a layer of oppositely doped semiconductor material that has a substantially wider bandgap energy. The device operates with a lower turn-on voltage than has previously been attainable, despite lattice mismatches between the two materials that can produce strain and substantial lattice dislocations in the low bandgap material. The two materials are selected so that the valence and conduction band edge discontinuities at the heterojunction enable a forward carrier flow but block a reverse carrier flow across the junction under forward-bias conditions. Preferred material systems are InAs for the narrow bandgap material, InGaAs for the wider bandgap material and InP for the substrate, or AlSb for the wider bandgap material and GaSb for the substrate. A compositional grading can be provided at the heterojunction to reduce energy band spikes, and a region of low dopant concentration is included in the wider bandgap material to increase the diode's reverse-bias breakdown voltage.
REFERENCES:
patent: 4198644 (1980-04-01), Esaki
patent: 4807006 (1989-02-01), Rogers et al.
patent: 5049522 (1991-09-01), Stanchina et al.
Woodcock et al. "Control of the Height of Schottky Barriers on MBE GaAs", Electronics Letters, vol. 19, No. 3, 3 Feb. 1983, pp. 93-95.
Eglash et al., "Barrier Heights from ohmic to Bandgap: Modified Al:GaAs Schottky Diodes by MBE", Proc. Int'l Electron Devices Meeting, Dec. 1983, pp. 119-122.
Ferry, ed., Gallium Arsenide Technology, Howard W. Sams & Co. Dec. 1985, pp. 303-330 and 376-382.
Sze, Physics of Semiconductor Devices, 2d, Ed., John Wiley & Sons, 1981, pp.182-184, 350, 706-715, 763-765 and 780-783.
Metzger Robert A.
Rensch David B.
Stanchina William E.
Denson-Low W. K.
Duraiswamy V. D.
Hughes Aircraft Company
Wojciechowicz Edward
LandOfFree
Heterojunction diode with low turn-on voltage does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Heterojunction diode with low turn-on voltage, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Heterojunction diode with low turn-on voltage will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1508331