Heterojunction-diode transistor EBS amplifier

Details Heterojunction-diode transistor EBS amplifier Heterojunction-diode transistor EBS amplifier

1981-02-02

1983-10-18

James, Andrew J.

357 13, 357 15, 357 16, 357 22, 357 61, H01L 2990, H01L 2948, H01L 2714, H01L 29161

Patent

active

044109032

ABSTRACT:
An improved apparatus modulates greater currents at higher frequencies over extended bandwidths. In addition to conventional biasing and modulation a beam of electrons is directed onto a heterojunction-diode device disposed to receive the modulating electron beam. The heterojunction diode device is fabricated from two different semiconducting materials having identical crystalline lattice structures, different fundamental energy bandgaps and different impurity types of different concentrations. This combination of properties assures greater output currents, higher frequency modulation and increased bandwidths.

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H. Morkoc et al., "A Study of High-Speed Normally Off and Normally On Al..0.5 Ga.sub.0.5 As Heterojunction gate GaAs FET's (HJFET)", IEEE Transaction on Electron Devices, vol. Ed.-25 No. 6 (1978) pp. 619-627.
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J. C. Campbell et al., "InP/InGaAs Heterojunction Phototransistors", IEEE Journal of Quantum Electronics, vol. QE-17 (1981) pp. 264-269.

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