Heterojunction D.sup.- (or A.sup.+) millimeter and submillimeter

Details Heterojunction D.sup.- (or A.sup.+) millimeter and submillimeter Heterojunction D.sup.- (or A.sup.+) millimeter and submillimeter

1985-11-27

1986-07-01

Buczinski, Stephen C.

357 2, 357 61, H01L 3100, H01L 4500

Patent

active

H00000957

ABSTRACT:
A solid state detector for use in detecting submillimeter and millimeter wave radiation. The solid state detector comprises a semiconductor superlattice of alternating thin epitaxial layers of GaAs and AlGaAs doped with impurities having the same conductivity type. Because of the transfer of charge carriers in order to obtain thermal equilibrium, the charge carriers in the higher energy doped layer transfer to the adjacent lower energy doped layer and form a predetermined number of either D.sup.- or A.sup.+ centers in this layer. This D.sup.- or A.sup.+ center formation is obtained without the use of an optical bias. The ionization energy for these D.sup.- or A.sup.+ centers is small enough that photons from millimeter or submillimeter wave radiation is sufficient to ionize these carriers and yield a measurable conductivity in the device.

REFERENCES:
Publication, "Physics of Semiconductor Devices," S. M. Sze, A Wiley Inter-Science Publication, J. Wiley & Sons, 1981, pp. 126-129.
Publication, "Photoconductivity from Shallow Negative Donor Ions in Silicon: A New Far-Infrared Detector," Journal of Applied Physics, vol. 47, No. 1, Jan. 1976, P. Norton, pp. 308-320.
Publication, "Quantum States of Confined Carriers in Very Thin Al.sub.x Ga.sub.1-x As--GaAs--Al.sub.x G.sub.1-x As Heterostructures, R. Dingle et al. Physical Review Letters, 30 Sep. 74, vol. 33, No. 14, pp. 827-830.

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