Heterojunction confinement field effect transistor

Details Heterojunction confinement field effect transistor Heterojunction confinement field effect transistor

1977-01-06

1979-06-05

Wojciechowicz, Edward J.

357 23, 357 16, 357 61, 357 63, H01L 2980

Patent

active

041575563

ABSTRACT:
An improved field-effect transistor is provided by forming the conducting channel boundary opposite the gate electrode as a heterojunction. For example a GaAs conducting channel may be bounded by an AlGaAs layer. The conduction electrons can penetrate the boundary very little and are constrained to the channel layer having good transport properties. The output conductance is reduced and the transconductance increased.

REFERENCES:
patent: 3657615 (1972-04-01), Driver
patent: 3767984 (1973-10-01), Shinoda et al.
patent: 3997908 (1976-12-01), Schloetterer et al.

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