Heterojunction confined channel FET

Details Heterojunction confined channel FET Heterojunction confined channel FET

1988-12-06

1991-02-19

James, Andrew J.

357 22, 357 232, 357 15, H01L 2980

Patent

active

049948687

ABSTRACT:
A new GaAs FET structure is provided by a process which provides a GaAs channel between AlGaAs layers and wherein the GaAs channel has a higher active carrier concentration than either adjacent AlGaAs layer.

REFERENCES:
patent: 4558337 (1985-12-01), Savnier
patent: 4641161 (1987-02-01), Kim
patent: 4748484 (1988-05-01), Takakuwa
patent: 4806998 (1989-02-01), Vinter

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