Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Patent
1998-09-02
2000-11-28
Dutton, Brian
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
257195, H01L 310328, H01L 310336, H01L 31072, H01L 31109
Patent
active
061538973
ABSTRACT:
A laminated layer having a layer containing Al (In) and a layer not containing Al (In) alternately laminated one upon another is plasma etched by an etchant gas which can etch both the layers containing and not containing Al (In). An additive gas containing F is added to the etchant gas while a layer not containing Al (In) is etched. When the surface of the layer containing Al (In) is exposed, fluorides are formed on the surface of the layer containing Al (In) and the etching is automatically stopped. An emission peak specific to Al (In) is monitored to detect which layer is presently etched.
REFERENCES:
patent: 4615102 (1986-10-01), Suzuki
patent: 4640737 (1987-02-01), Nagasaka et al.
patent: 5118637 (1992-06-01), Ishikawa
patent: 5160994 (1992-11-01), Shimawaki
patent: 5391512 (1995-02-01), Shiga
patent: 5411632 (1995-05-01), Delage et al.
patent: 5479028 (1995-12-01), Tomioka et al.
"Dry-Etch Monitoring of III-V Heterostructures Using Laser Reflectometry And Optical Emission Spectroscopy"; Collot et al.; J. Vac. Sci. Tech, B(1991), 9(5), abstract.
Oguri Hiroyuki
Yokoyama Teruo
Dutton Brian
Fujitsu Limited
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