Heterojunction bipolar transistor with substantially aligned ene

Details Heterojunction bipolar transistor with substantially aligned ene Heterojunction bipolar transistor with substantially aligned ene

1987-10-30

1989-04-11

Larkins, William D.

357 16, 357 4, 357 61, H01L 2972

Patent

active

048210820

ABSTRACT:
Heterojunction bipolar transistors are disclosed having an energy band offset in the valence or conduction band and the other of the bands being substantially aligned at the heterojunction. For an npn transistor the conduction band is substantially aligned and the bandgap difference is in the valence band. A pnp type transistor is also disclosed wherein all the bandgap difference is in the conduction band and the valence band is substantially aligned. The npn type transistor provides improved hole confinement in the base as well as enhanced electron injection and collection. In one embodiment of a double heterojunction bipolar transistor, materials are selected that utilize Ga compounds in the base and Al and/or In compounds in the emitter and collector, which have a valence band offset of approximately 400 meV or greater and an aligned conduction band at both of the heterojunctions.

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