Heterojunction bipolar transistor with silicon-germanium base

Details Heterojunction bipolar transistor with silicon-germanium base Heterojunction bipolar transistor with silicon-germanium base

1994-04-05

1996-04-09

Fahmy, Wael M.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

257198, 257588, H01L 310328, H01L 27082

Patent

active

055064272

ABSTRACT:
The invention provides a heterojunction bipolar transistor which has a low reistance SiGe base and is high in current gain and cutoff frequency even at low temperatures near the liquid nitrogen temperature. The transistor fabrication process comprises forming an n-type collector layer on a silicon substrate and a dielectric film on the collector layer, forming a base electrode of p.sup.+ -type polysilicon having an opening on the dielectric film, isotropically etching the dielectric film on the collector layer by using the opening of the base electrode to form a window, forming an external base layer of p.sup.+ -type silicon on the collector layer exposed by the window, selectively etching the external base layer to form an aperture in a central region, forming a p-type SiGe intrinsic base layer in the aperture of the external base layer and then forming an n.sup.+ -type emitter on the intrinsic base layer.

REFERENCES:
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patent: 5140400 (1992-08-01), Morishita
patent: 5177583 (1993-01-01), Endo et al.
patent: 5321301 (1994-06-01), Sato et al.
patent: 5389803 (1995-02-01), Mohammad
E. F. Crabbe, G. L. Patton, J. M. C. Stork, J. H. Comfort, B. S. Meyerson and J. Y. -C. Sun, "Low Temperature Operation of Si and SiGe Bipolar Transistors", IEEE EICM, 1990, pp. 90-17 to 90-20.
G. L. Patton, J. M. C. Stork, J. H. Comfort, E. F. Crabbe, B. S. Meyerson, D. L. Harame and J. Y. -C. Sun, "SiGe-Base Heterojunction Bipolar Transistors: Physics And Design Issues", IEEE IEDM, 1990, pp. 90-13 to 90-16.
F. Sato, H. Takemura, T. Tashiro, H. Hirayama, M. Hiroi, K. Koyama and M. Nakamae, "A `Self-Aligned` Selective MBE Technology For High-Performance Bipolar Transistors", IEEE IEDM, 1990, pp. 90-607 to 90-610.
E. Ganin, T. C. Chen, J. M. C. Stork, B. S. Meyerson, J. D. Cressler, G. Scilla, J. Warnock, D. L. Harame, G. L. Patton, and T. H. Ning, "Epitaxial-Base Double-Poly SElf-Aligned Bipolar Transistors" IEEE IEDM, 1990, pp. 90-603 to 90-606.

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